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Kingston 99U5429-007.A00LF 2GB
Kllisre HMA81GU6AFR8N-VK 8GB

Kingston 99U5429-007.A00LF 2GB vs Kllisre HMA81GU6AFR8N-VK 8GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.8
    测试中的平均数值
Kllisre HMA81GU6AFR8N-VK 8GB 需要考虑的原因
Kllisre HMA81GU6AFR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 75
    左右 -39% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 2,036.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 54
  • 读取速度，GB/s
    3,986.4 left arrow 10.8
  • 写入速度，GB/s
    2,036.1 left arrow 8.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    714 left arrow 2277

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Kllisre HMA81GU6AFR8N-VK 8GB RAM的比较

Essencore Limited IM48GU88N26-GIIHA0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3200C18D4/16G 16GB
Kingston KHX3200C18D4/16G 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK16GX4M4C3200C16 4GB
Corsair CMK16GX4M4C3200C16 4GB
内存RAM
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905678-026.A00G 8GB
Kingston 9905678-026.A00G 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905711-017.A00G 4GB
Kingston 9905711-017.A00G 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM