Kingston 99U5429-007.A00LF 2GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异规格评论

差异

Kingston 99U5429-007.A00LF 2GB

需要考虑的原因
Kingston 99U5429-007.A00LF 2GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值
更快的写入速度，GB/s

2,036.1 10.1

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 75

左右 -108% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-007.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 36
读取速度，GB/s

3,986.4 13.9
写入速度，GB/s

2,036.1 10.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

714 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5429-007.A00LF 2GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Panram International Corporation D4N2666PS-16G 16GB

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Crucial Technology CT16G4DFD8266.M16FH 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-2400C16-16GFXR 16GB

G Skill Intl F4-2400C16-16GFXR 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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V-Color Technology Inc. TL48G32S8KSRGB16 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB