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Kingston 99U5429-007.A00LF 2GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

Kingston 99U5429-007.A00LF 2GB vs Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,036.1 left arrow 15.6
    测试中的平均数值
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 75
    左右 -168% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 28
  • 读取速度，GB/s
    3,986.4 left arrow 18.8
  • 写入速度，GB/s
    2,036.1 left arrow 15.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    714 left arrow 3465

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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内存RAM
Kingston ACR512X64D3S13C9G 4GB
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AMD R5S38G1601U2S 8GB
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内存RAM
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Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
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Corsair CMW32GX4M4Z3200C16 8GB
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