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Kingston 99U5584-017.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Kingston 99U5584-017.A00LF 4GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分
star star star star star
Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异 规格 评论

差异

Kingston 99U5584-017.A00LF 4GB 需要考虑的原因
Kingston 99U5584-017.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 9.3
    测试中的平均数值
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-017.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 28
  • 读取速度，GB/s
    15.5 left arrow 12.2
  • 写入速度，GB/s
    9.8 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2510 left arrow 2382

Kingston 99U5584-017.A00LF 4GB RAM的比较

Samsung M378B5173EB0-YK0 4GB
Kingston 9905584-016.A00LF 4GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Corsair CML8GX3M2A1866C9 4GB
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内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Crucial Technology BLS8G4D26BFSC.16FD2 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMK16GX4M2B3600C18 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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