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Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CB8GS2400.C8ET 8GB

Kingston ACR16D3LFS1KBG/2G 2GB vs Crucial Technology CB8GS2400.C8ET 8GB

总分
star star star star star
Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

总分
star star star star star
Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

差异 规格 评论

差异

Kingston ACR16D3LFS1KBG/2G 2GB 需要考虑的原因
Kingston ACR16D3LFS1KBG/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
Crucial Technology CB8GS2400.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8ET 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 7.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 4.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CB8GS2400.C8ET 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    7.1 left arrow 16.2
  • 写入速度，GB/s
    4.2 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    969 left arrow 2941

Kingston ACR16D3LFS1KBG/2G 2GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A1G43EB1-CPB 8GB

Crucial Technology CB8GS2400.C8ET 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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