Kingston ACR16D3LFS1KBG/2G 2GB vs Kingston 9905702-014.A00G 8GB

总分

Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

总分

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB

差异规格评论

差异

Kingston ACR16D3LFS1KBG/2G 2GB

需要考虑的原因
Kingston ACR16D3LFS1KBG/2G 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 37% 更低的延时

Kingston 9905702-014.A00G 8GB

需要考虑的原因
Kingston 9905702-014.A00G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 7.1

测试中的平均数值
更快的写入速度，GB/s

10.8 4.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LFS1KBG/2G 2GB

Kingston 9905702-014.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 43
读取速度，GB/s

7.1 16.7
写入速度，GB/s

4.2 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

969 3223

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX1600C9S3L/8G 8GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMK32GX4M2D3600C18 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CM4X16GE2133C15S2 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB