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Kingston ACR16D3LS1KNG/4G 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
比较
Kingston ACR16D3LS1KNG/4G 4GB vs Team Group Inc. TEAMGROUP-UD4-2933 8GB
总分
Kingston ACR16D3LS1KNG/4G 4GB
总分
Team Group Inc. TEAMGROUP-UD4-2933 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
61
左右 51% 更低的延时
需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-2933 8GB
报告一个错误
更快的读取速度,GB/s
17.4
12.5
测试中的平均数值
更快的写入速度,GB/s
8.8
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston ACR16D3LS1KNG/4G 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
61
读取速度,GB/s
12.5
17.4
写入速度,GB/s
7.8
8.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1917
2134
Kingston ACR16D3LS1KNG/4G 4GB RAM的比较
Samsung M471A5143EB1-CRC 4GB
Kingston MSI16D3LS1KBG/4G 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3600C14-8GTRGB 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Kingston 99U5474-038.A00LF 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Corsair CM4X16GE2666C18S2 16GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CM4S16GL3200K18K2 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA851S6CJR6N-VK 4GB
Corsair CM2X1024-8500C5D 1GB
Samsung 9905599-020.A00G 16GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4266C19-32GTZR 32GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GVK 8GB
报告一个错误
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Bug description
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