Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 36% 更低的延时

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

更快的读取速度，GB/s

12.7 11.9

测试中的平均数值
更快的写入速度，GB/s

10.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 42
读取速度，GB/s

11.9 12.7
写入速度，GB/s

8.5 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung V-GeN D4S8GL26A8TL5 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

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Ramaxel Technology RMUA5200MR78HAF-3200 8GB

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PNY Electronics PNY 2GB

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Golden Empire CL16-18-18 D4-3000 16GB

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Corsair CM2X1024-6400C4 1GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

PNY Electronics PNY 2GB

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Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

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Kingston 99U5471-012.A00 4GB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB