PNY Electronics PNY 2GB vs Golden Empire CL16-18-18 D4-3000 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Golden Empire CL16-18-18 D4-3000 16GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3000 16GB

报告一个错误

更快的读取速度，GB/s

17 13.8

测试中的平均数值
更快的写入速度，GB/s

12.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Golden Empire CL16-18-18 D4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.8 17.0
写入速度，GB/s

8.4 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3255

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Corsair CMW16GX4M2C3200C16 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology CT4G4SFS824A.C8FBR2 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Avant Technology W641GU42J5213NC 8GB

Avant Technology W641GU42J5213NC 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB