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Kingston ACR256X64D3S1333C9 2GB
Micron Technology M471A1K43CB1-CTD 8GB

Kingston ACR256X64D3S1333C9 2GB vs Micron Technology M471A1K43CB1-CTD 8GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
Micron Technology M471A1K43CB1-CTD 8GB 需要考虑的原因
Micron Technology M471A1K43CB1-CTD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Micron Technology M471A1K43CB1-CTD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    11.9 left arrow 14.8
  • 写入速度，GB/s
    8.5 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 2825

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Micron Technology M471A1K43CB1-CTD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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内存RAM
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Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
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内存RAM
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Team Group Inc. Team-Elite-1333 4GB
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G Skill Intl F4-2400C17-8GSXK 8GB
内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Kingston 9905663-030.A00G 16GB
内存RAM