RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Panram International Corporation W4N2666PS-8G 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Panram International Corporation W4N2666PS-8G 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Panram International Corporation W4N2666PS-8G 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
27
左右 -35% 更低的延时
更快的读取速度,GB/s
17.9
11.9
测试中的平均数值
更快的写入速度,GB/s
14.3
8.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Panram International Corporation W4N2666PS-8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
20
读取速度,GB/s
11.9
17.9
写入速度,GB/s
8.5
14.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1620
3127
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Panram International Corporation W4N2666PS-8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Kingston ACR256X64D3S1333C9 2GB
Panram International Corporation W4N2666PS-8G 8GB
Samsung M471B5273CH0-CF8 4GB
Samsung M471B5673FH0-CF8 2GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMK32GX4M4C3000C15 8GB
Samsung M393B1K70QB0-CK0 8GB
Apacer Technology 78.C1GMM.BAC0B 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMR64GX4M4C3200C16 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMSX32GX4M2A3000C16 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMD16GX4M4B3000C14 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD8266 16GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471B5173DB0-YK0 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
×
Bug description
Source link