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Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
比较
Kingston ACR512X64D3S13C9G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
总分
Kingston ACR512X64D3S13C9G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
更快的读取速度,GB/s
15.6
11.5
测试中的平均数值
更快的写入速度,GB/s
11.8
8.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
11.5
15.6
写入速度,GB/s
8.5
11.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1756
2382
Kingston ACR512X64D3S13C9G 4GB RAM的比较
TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM的比较
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393A1G40DB0-CPB 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Kingston ACR512X64D3S13C9G 4GB
SpecTek Incorporated 16G2666CL19 16GB
Kingston 99U5584-001.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston K1CXP8-MIE 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Heoriady M471A1K43CB1-CTD 8GB
Kingston KF552C40-16 16GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905744-066.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3200C16-8GRKB 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2666C18-32GRS 32GB
报告一个错误
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Bug description
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