Kingston ACR512X64D3S13C9G 4GB vs Samsung M378A1G44BB0-CWE 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Samsung M378A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44BB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.1 11.5

测试中的平均数值
更快的写入速度，GB/s

9.2 8.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Samsung M378A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

11.5 15.1
写入速度，GB/s

8.5 9.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1756 2488

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Apacer Technology GD2.2229BH.001 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology CT8G4SFS832A.C8FE 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Corsair CMT16GX4M2K4000C19 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200