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Kingston HX318C10FK/4 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB

Kingston HX318C10FK/4 4GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
Crucial Technology CT8G4SFS6266.M4FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 69
    左右 -92% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 36
  • 读取速度，GB/s
    6.1 left arrow 17.1
  • 写入速度，GB/s
    4.1 left arrow 12.6
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 2920

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

Crucial Technology CT8G4SFS6266.M4FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C16-8GTZNC 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMW16GX4M2Z4600C18 8GB
Corsair CMW16GX4M2Z4600C18 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
内存RAM