RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston K531R8-MIN 4GB
Corsair CMSX16GX4M2A3200C22 8GB

Kingston K531R8-MIN 4GB vs Corsair CMSX16GX4M2A3200C22 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 30% 更低的延时
Corsair CMSX16GX4M2A3200C22 8GB 需要考虑的原因
Corsair CMSX16GX4M2A3200C22 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Corsair CMSX16GX4M2A3200C22 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 40
  • 读取速度，GB/s
    13.4 left arrow 16.8
  • 写入速度，GB/s
    9.0 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3015

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Corsair CMSX16GX4M2A3200C22 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KF2666C16S4/16G 16GB
Kingston KF2666C16S4/16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMSX16GX4M2A3200C22 8GB
Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD32GX4M4C3200C16 8GB
Corsair CMD32GX4M4C3200C16 8GB
内存RAM
Corsair CMD8GX3M2A2800C12 4GB
Corsair CMD8GX3M2A2800C12 4GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Kingston ACR26D4S9D8MD-16 16GB
Kingston ACR26D4S9D8MD-16 16GB
内存RAM