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Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

总分
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Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6
报告一个错误
  • 更快的读取速度，GB/s
    8.6 left arrow 7.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.4 left arrow 4.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    8.6 left arrow 7.7
  • 写入速度，GB/s
    5.4 left arrow 4.4
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 1175

Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM的比较

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Hynix Semiconductor (Hyundai Electronics) HMT351S6
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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A
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