RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT351S6 vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6
报告一个错误
更快的读取速度,GB/s
8.6
7.7
测试中的平均数值
更快的写入速度,GB/s
5.4
4.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
30
左右 -7% 更低的延时
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
30
28
读取速度,GB/s
8.6
7.7
写入速度,GB/s
5.4
4.4
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1344
1175
Hynix Semiconductor (Hyundai Electronics) HMT351S6 RAM的比较
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C15-8GRR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB RAM的比较
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Kingston KY7N41-MIE 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Corsair CMD16GX3M2A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 99U5474-022.A00LF 2GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A
Kingston K1N7HK-ELC 2GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Mushkin 991988 (996988) 4GB
Samsung M471A5644EB0-CPB 2GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4800C18-8GTRG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
报告一个错误
×
Bug description
Source link