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Kingston K531R8-MIN 4GB
G Skill Intl F4-3200C16-8GVRB 8GB

Kingston K531R8-MIN 4GB vs G Skill Intl F4-3200C16-8GVRB 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GVRB 8GB

G Skill Intl F4-3200C16-8GVRB 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
G Skill Intl F4-3200C16-8GVRB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GVRB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
G Skill Intl F4-3200C16-8GVRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    13.4 left arrow 17.7
  • 写入速度，GB/s
    9.0 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3313

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

G Skill Intl F4-3200C16-8GVRB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Apacer Technology 78.DAGNN.4030B 16GB
Apacer Technology 78.DAGNN.4030B 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston KTP9W1-MID 16GB
Kingston KTP9W1-MID 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM