Kingston KF552C40-16 16GB vs SK Hynix HMA851S6CJR6N-XN 4GB

总分

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

差异规格评论

差异

Kingston KF552C40-16 16GB

需要考虑的原因
Kingston KF552C40-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 21% 更低的延时
更快的读取速度，GB/s

15.5 15.1

测试中的平均数值
更快的写入速度，GB/s

13.2 11.6

测试中的平均数值

SK Hynix HMA851S6CJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6CJR6N-XN 4GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KF552C40-16 16GB

SK Hynix HMA851S6CJR6N-XN 4GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

30 38
读取速度，GB/s

15.5 15.1
写入速度，GB/s

13.2 11.6
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3343 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Kingston 9905700-072.A01G 16GB

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Kingston 9905403-061.A00LF 2GB

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Kingston KF552C40-16 16GB

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SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

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Crucial Technology CT8G4SFS632A.M4FE 8GB

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Samsung M471A5244CB0-CWE 4GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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Samsung M386B4G70DM0-CMA4 32GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB