RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology CT8G4DFS8213.C8FBR1 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
71
左右 -115% 更低的延时
更快的写入速度,GB/s
9.0
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
33
读取速度,GB/s
2,831.6
14.4
写入速度,GB/s
1,322.6
9.0
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2486
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR16N11/8-SP 8GB
SK Hynix HMA82GS6MFR8N-TF 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Kingston 9905471-006.A00LF 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Peak Electronics 256X64M-67E 2GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3866C18-4GVK 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-4000C19-8GTZ 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Corsair CM2X1024-8500C5D 1GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CMSX16GX4M1A2666C18 16GB
Samsung M378B5673EH1-CF8 2GB
Kllisre DDR4-8GB 8GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
报告一个错误
×
Bug description
Source link