Kingston KHX1600C9D3/4G 4GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

22.8 14.5

测试中的平均数值
更快的写入速度，GB/s

16.9 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

14.5 22.8
写入速度，GB/s

9.7 16.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

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Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB