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Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology CT25664BA160B.C16F 2GB vs Crucial Technology BLS4G4D26BFSE.8FE 4GB

总分
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
Crucial Technology BLS4G4D26BFSE.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 29
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 19
  • 读取速度，GB/s
    14.3 left arrow 20.4
  • 写入速度，GB/s
    10.1 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 3066

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-018.A00LF 4GB
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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3000C15-4GVR 4GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
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Corsair CMX4GX3M2A1600C9 2GB
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内存RAM
Samsung 1600 CL10 Series 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Samsung M378A1K43BB2-CRC 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Kingston KMKYF9-MIH 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
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Kingston KHX2133C14S4/8G 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
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内存RAM
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Apacer Technology 78.BAGN8.AZC0B 4GB
内存RAM