Kingston KHX1600C9D3/4GX 4GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB

总分

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

总分

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

差异规格评论

差异

Kingston KHX1600C9D3/4GX 4GB

需要考虑的原因
Kingston KHX1600C9D3/4GX 4GB

报告一个错误

Crucial Technology CT16G4DFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FDD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 -18% 更低的延时
更快的读取速度，GB/s

14.7 14.4

测试中的平均数值
更快的写入速度，GB/s

9.2 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4GX 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 34
读取速度，GB/s

14.4 14.7
写入速度，GB/s

8.8 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2363 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Ramaxel Technology RMUA5110ME78HAF-2666 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Transcend Information AQD-D4U4GN21-SG 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

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G Skill Intl F4-2666C18-16GRS 16GB

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Kingston 99U5584-010.A00LF 4GB

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Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB