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Kingston KHX1600C9S3L/4G 4GB
Asgard VML41UG-MIC1U22T1 8GB

Kingston KHX1600C9S3L/4G 4GB vs Asgard VML41UG-MIC1U22T1 8GB

总分
star star star star star
Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分
star star star star star
Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异 规格 评论

差异

Kingston KHX1600C9S3L/4G 4GB 需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 65
    左右 38% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 8.4
    测试中的平均数值
Asgard VML41UG-MIC1U22T1 8GB 需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9S3L/4G 4GB
Asgard VML41UG-MIC1U22T1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 65
  • 读取速度，GB/s
    13.1 left arrow 16.4
  • 写入速度，GB/s
    8.5 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 2041

Kingston KHX1600C9S3L/4G 4GB RAM的比较

Kingston TSB16D3LS1KFG/4G 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB

Asgard VML41UG-MIC1U22T1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905471-006.A01LF 4GB
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Kingston 9905700-026.A00G 8GB
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内存RAM
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Corsair CM3X8GA2400C11Y2R 8GB
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内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
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Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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SK Hynix HMAA2GS6AJR8N-XN 16GB
内存RAM
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Samsung M391A1K43BB1-CRC 8GB
内存RAM
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Samsung M378B5673FH0-CH9 2GB
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G Skill Intl F4-3200C16-8GSX 8GB
内存RAM