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Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Kingston KHX3200C18D4/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

总分
star star star star star
Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

差异 规格 评论

差异

Kingston KHX3200C18D4/8G 8GB 需要考虑的原因
Kingston KHX3200C18D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 6.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误

规格

完整的技术规格清单
Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 40
  • 读取速度，GB/s
    18.2 left arrow 9.1
  • 写入速度，GB/s
    14.9 left arrow 6.9
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3501 left arrow 2031

Kingston KHX3200C18D4/8G 8GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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