Kingston KP223C-ELD 2GB vs Corsair CMD16GX4M2B3866C18 8GB

总分

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分

Corsair CMD16GX4M2B3866C18 8GB

Corsair CMD16GX4M2B3866C18 8GB

差异规格评论

差异

Kingston KP223C-ELD 2GB

需要考虑的原因
Kingston KP223C-ELD 2GB

报告一个错误

Corsair CMD16GX4M2B3866C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

19.2 13.4

测试中的平均数值
更快的写入速度，GB/s

14.8 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KP223C-ELD 2GB

Corsair CMD16GX4M2B3866C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.4 19.2
写入速度，GB/s

8.8 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2137 3326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation PUD42400C154G2NJK 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Micron Technology 4ATS1G64HZ-2G3B1 8GB

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SK Hynix HMAA2GS6AJR8N-XN 16GB

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Samsung M471B5273DH0-CH9 4GB

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Apacer Technology 78.D2GG7.AU30B 16GB

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Kingston 9905403-447.A00LF 4GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

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G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

G Skill Intl F4-3200C14-8GVR 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N