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Kingston KP223C-ELD 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Kingston KP223C-ELD 2GB vs Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

总分
star star star star star
Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

差异 规格 评论

差异

Kingston KP223C-ELD 2GB 需要考虑的原因
Kingston KP223C-ELD 2GB
报告一个错误
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.4 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston KP223C-ELD 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    13.4 left arrow 17.6
  • 写入速度，GB/s
    8.8 left arrow 17.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2137 left arrow 3845

Kingston KP223C-ELD 2GB RAM的比较

Samsung M378B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Kingston ACR32D4U2S8ME-16 16GB
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内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Kingston 9965600-027.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9965662-019.A00G 32GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X16GC3000C15K4 16GB
Corsair CM4X16GC3000C15K4 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM