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Kingston KVR16N11/8-SP 8GB
Kingston K821PJ-MID 16GB

Kingston KVR16N11/8-SP 8GB vs Kingston K821PJ-MID 16GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 41
    左右 37% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 12.7
    测试中的平均数值
Kingston K821PJ-MID 16GB 需要考虑的原因
Kingston K821PJ-MID 16GB
报告一个错误
  • 更快的写入速度，GB/s
    10.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Kingston K821PJ-MID 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 41
  • 读取速度，GB/s
    13.9 left arrow 12.7
  • 写入速度，GB/s
    9.5 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2338

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Kingston K821PJ-MID 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston K821PJ-MID 16GB
Kingston K821PJ-MID 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
G Skill Intl F4-4000C19-16GTZR 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Corsair CM4B16G7L2666A16K2-O 16GB
Corsair CM4B16G7L2666A16K2-O 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM