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Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
比较
Kingston KVR533D2N4 512MB vs Patriot Memory (PDP Systems) 2666 C18 Series 16GB
总分
Kingston KVR533D2N4 512MB
总分
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
75
左右 -134% 更低的延时
更快的读取速度,GB/s
15.4
1
测试中的平均数值
更快的写入速度,GB/s
12.2
1,672.1
测试中的平均数值
更高的内存带宽,mbps
21300
4200
左右 5.07 更高的带宽
规格
完整的技术规格清单
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
32
读取速度,GB/s
1,943.5
15.4
写入速度,GB/s
1,672.1
12.2
内存带宽,mbps
4200
21300
Other
描述
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
4-4-4-12 / 533 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
301
2933
Kingston KVR533D2N4 512MB RAM的比较
Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMSX16GX4M2A2666C18 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905700-017.A00G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
A-DATA Technology DDR2 800G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Kingston 9965433-034.A00LF 4GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C19-16GSXW 16GB
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