Kingston KVR800D2N6/2G 2GB vs Corsair CMW16GX4M1D3000C16 16GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 18.1

测试中的平均数值

Corsair CMW16GX4M1D3000C16 16GB

需要考虑的原因
Corsair CMW16GX4M1D3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 -85% 更低的延时
更快的写入速度，GB/s

14.8 1,905.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Corsair CMW16GX4M1D3000C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 27
读取速度，GB/s

5,143.3 18.1
写入速度，GB/s

1,905.1 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3779

RAM Latency Calculator

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-4800C19-8GTZRC 8GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3200C16-4GRKD 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB