PNY Electronics PNY 2GB vs G Skill Intl F4-2666C19-8GRS 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

G Skill Intl F4-2666C19-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GRS 8GB

报告一个错误

更快的读取速度，GB/s

16.3 13.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-2666C19-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.8 16.3
写入速度，GB/s

8.4 12.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 2863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Kingston 99U5474-022.A00LF 2GB

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Kingston 9905664-010.A00G 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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V-GEN D4H16GS24A8 16GB

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Crucial Technology CT4G4SFS8213.C8FBD2 4GB

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AMD R5S38G1601U2S 8GB

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Kingston KHX2666C13D4/4GX 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB