Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-4266C19-32GTZR 32GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-4266C19-32GTZR 32GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 16.5

测试中的平均数值

G Skill Intl F4-4266C19-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-4266C19-32GTZR 32GB

报告一个错误

低于PassMark测试中的延时，ns

22 50

左右 -127% 更低的延时
更快的写入速度，GB/s

13.4 1,905.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-4266C19-32GTZR 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 22
读取速度，GB/s

5,143.3 16.5
写入速度，GB/s

1,905.1 13.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 3665

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Ramaxel Technology RMR1810EC58E8F1333 2GB

Ramaxel Technology RMR1810EC58E8F1333 2GB