SK Hynix HMT325S6CFR8C-H9 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

Crucial Technology BLS16G4D30AESC.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

17.4 10.7

测试中的平均数值
更快的写入速度，GB/s

13.1 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

10.7 17.4
写入速度，GB/s

6.8 13.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1314 3437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston XJV223-MIE-NX 16GB

Kingston XJV223-MIE-NX 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N