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Kllisre KRE-D3U1600M/8G 8GB
Kingston KCRXJ6-HYJ 16GB

Kllisre KRE-D3U1600M/8G 8GB vs Kingston KCRXJ6-HYJ 16GB

总分
star star star star star
Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

总分
star star star star star
Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

差异 规格 评论

差异

Kllisre KRE-D3U1600M/8G 8GB 需要考虑的原因
Kllisre KRE-D3U1600M/8G 8GB
报告一个错误
Kingston KCRXJ6-HYJ 16GB 需要考虑的原因
Kingston KCRXJ6-HYJ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 40
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kllisre KRE-D3U1600M/8G 8GB
Kingston KCRXJ6-HYJ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 38
  • 读取速度，GB/s
    14.4 left arrow 14.7
  • 写入速度，GB/s
    9.0 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2455 left arrow 2606

Kllisre KRE-D3U1600M/8G 8GB RAM的比较

Samsung M378B5173EB0-YK0 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB

Kingston KCRXJ6-HYJ 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905700-013.A00G 8GB
Kingston 9905700-013.A00G 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X16GC3200C16K2 16GB
Corsair CM4X16GC3200C16K2 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Corsair VS2GB1333D4 2GB
Corsair VS2GB1333D4 2GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM