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Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 22.8
    测试中的平均数值
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 59
    左右 -103% 更低的延时
  • 更快的写入速度，GB/s
    16.9 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 29
  • 读取速度，GB/s
    4,168.0 left arrow 22.8
  • 写入速度，GB/s
    1,855.7 left arrow 16.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    680 left arrow 3792

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
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G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
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Corsair CML8GX3M2A1866C9 4GB
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
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G Skill Intl F4-2666C18-8GFT 8GB
内存RAM
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Samsung M378B5173BH0-CH9 4GB
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Crucial Technology BLS4G4D26BFSC.8FD2 4GB
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