Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BL8G32C16U4WL.M8FE1 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 -27% 更低的延时
更快的读取速度，GB/s

21.2 17.8

测试中的平均数值
更快的写入速度，GB/s

16.4 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 26
读取速度，GB/s

17.8 21.2
写入速度，GB/s

12.5 16.4
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 3755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Samsung M391B5673EH1-CH9 2GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3300C16-4GRRD 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK64GX4M8X4133C19 8GB

Corsair CMK64GX4M8X4133C19 8GB