RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BLS4G4D26BFSB.8FE 4GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Crucial Technology BLS4G4D26BFSB.8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
17.7
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
33
左右 -27% 更低的延时
更快的写入速度,GB/s
14.8
12.5
测试中的平均数值
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
26
读取速度,GB/s
17.8
17.7
写入速度,GB/s
12.5
14.8
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3285
3055
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSB.8FE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2400C11-8GSR 8GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston 99U5584-007.A00LF 4GB
Samsung M393A1G40EB1-CRC 8GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CM4B8G1J2800K14K 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Crucial Technology CT25664BA1339.M8FK 2GB
V-GEN D4S4GL32A16TS 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMD16GX4M4B3000C15 4GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905702-002.A00G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD16GX4M2B2400C10 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2666C15-8GVS 8GB
报告一个错误
×
Bug description
Source link