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Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 11.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB 需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 33
    左右 -32% 更低的延时

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 25
  • 读取速度，GB/s
    17.8 left arrow 15.4
  • 写入速度，GB/s
    12.5 left arrow 11.9
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2635

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMH32GX4M4E3200C16 8GB
Corsair CMH32GX4M4E3200C16 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK32GX4M4B4000C19 8GB
Corsair CMK32GX4M4B4000C19 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3200C16-8GIS 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Kingston KMKYF9-MIB 8GB
Kingston KMKYF9-MIB 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CM4X8GD3200C16K2E 8GB
Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C18-16GTZN 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
Kingston 9905664-010.A00G 4GB
Kingston 9905664-010.A00G 4GB
内存RAM