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Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-2800C14-16GTZ 16GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
G Skill Intl F4-2800C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
38
左右 13% 更低的延时
更快的读取速度,GB/s
17.8
13.8
测试中的平均数值
更快的写入速度,GB/s
12.5
10.2
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
38
读取速度,GB/s
17.8
13.8
写入速度,GB/s
12.5
10.2
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
2841
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-444.A00LF 4GB
Mushkin 99[2/7/4]192F 4GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-3000C15-4GVR 4GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Panram International Corporation PUD42400C154G4NJK 4GB
Kingston 99U5315-023.A00LF 512MB
Corsair CMK16GX4M4C3000C16 4GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 99U5474-028.A00LF 4GB
Panram International Corporation D4N2400PS-8G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology AFLD416EH1P 16GB
Samsung M393B2G70BH0-CK0 16GB
Avant Technology W641GU67J7240N8 8GB
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
ASint Technology SSA302G08-EGN1C 4GB
EVGA 16G-D4-2666-MR 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
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