Samsung M393B5170FH0-CK0 4GB vs Corsair CMK8GX4M2B4200C19 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 39% 更低的延时

Corsair CMK8GX4M2B4200C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4200C19 4GB

报告一个错误

更快的读取速度，GB/s

14.7 11.8

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMK8GX4M2B4200C19 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 44
读取速度，GB/s

11.8 14.7
写入速度，GB/s

7.3 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU880-32A160T 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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SK Hynix HMA82GR7AFR8N-UH 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-3200C15-8GTZ 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kllisre 8ATF1G64AZ-2G6H1 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB