Lexar Co Limited LD4AU016G-H3200GST 16GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 86

左右 62% 更低的延时
更快的读取速度，GB/s

17.8 12.1

测试中的平均数值
更快的写入速度，GB/s

12.5 5.7

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

报告一个错误

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 86
读取速度，GB/s

17.8 12.1
写入速度，GB/s

12.5 5.7
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 1220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Unifosa Corporation HU564404EP0200 4GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Kingston 9905403-439.A00LF 4GB

Kingston 9905403-439.A00LF 4GB

AMD R538G1601U2S-UGO 8GB

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Corsair CM2X2048-6400C5 2GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Corsair CMD8GX3M2A2933C12 4GB

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Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB