RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905624-044.A00G 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Kingston 9905624-044.A00G 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 6.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston 9905624-044.A00G 8GB 需要考虑的原因
Kingston 9905624-044.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 -18% 更低的延时

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905624-044.A00G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 28
  • 读取速度，GB/s
    17.8 left arrow 12.8
  • 写入速度，GB/s
    12.5 left arrow 6.1
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 1974

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905624-044.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Kingston KF3600C17D4/8GX 8GB
Kingston KF3600C17D4/8GX 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM