Lexar Co Limited LD4AU016G-H3200GST 16GB vs Micron Technology 16A6A2G64HZ-2-2E1 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 17

测试中的平均数值
更快的写入速度，GB/s

12.5 8.9

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Micron Technology 16A6A2G64HZ-2-2E1 16GB

需要考虑的原因
Micron Technology 16A6A2G64HZ-2-2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 33

左右 -50% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 22
读取速度，GB/s

17.8 17.0
写入速度，GB/s

12.5 8.9
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 2623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5711-001.A00G 4GB

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Samsung M393B5170FH0-CK0 4GB

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Samsung M378A2K43CB1-CRC 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

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Kingston 9905702-204.A00G 8GB