Lexar Co Limited LD4AU016G-H3200GST 16GB vs Samsung M378A1G44BB0-CWE 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 6% 更低的延时
更快的读取速度，GB/s

17.8 15.1

测试中的平均数值
更快的写入速度，GB/s

12.5 9.2

测试中的平均数值

Samsung M378A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44BB0-CWE 8GB

报告一个错误

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M378A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 35
读取速度，GB/s

17.8 15.1
写入速度，GB/s

12.5 9.2
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3285 2488

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

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SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

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