Lexar Co Limited LD4AU016G-H3200GST 16GB vs Samsung M47472K43DB1-CTD 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 15.5

测试中的平均数值
更快的写入速度，GB/s

12.5 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Samsung M47472K43DB1-CTD 16GB

需要考虑的原因
Samsung M47472K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M47472K43DB1-CTD 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

17.8 15.5
写入速度，GB/s

12.5 8.0
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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AMD R748G2133U2S 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Corsair CMK32GX4M2D3000C16 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB