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Lexar Co Limited LD4AU016G-H3200GST 16GB
SK Hynix HMA41GR7AFR4N-TF 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs SK Hynix HMA41GR7AFR4N-TF 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 52
    左右 37% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 10.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
SK Hynix HMA41GR7AFR4N-TF 8GB 需要考虑的原因
SK Hynix HMA41GR7AFR4N-TF 8GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
SK Hynix HMA41GR7AFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 52
  • 读取速度，GB/s
    17.8 left arrow 10.3
  • 写入速度，GB/s
    12.5 left arrow 8.5
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2390

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA41GR7AFR4N-TF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
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Kingston 99U5584-007.A00LF 4GB
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Kingston K6VDX7-HYD 8GB
内存RAM
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内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
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内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
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Kingston 9905624-009.A00G 8GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
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Kingston XK2M26-MIE 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Crucial Technology BLS8G4D26BFSB.16FD2 8GB
内存RAM
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Corsair VS1GB800D2 1GB
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内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Corsair CMK32GX4M4B4000C19 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM