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Lexar Co Limited LD4AU016G-H3200GST 16GB
Unigen Corporation LEX010SGD2800QU-EJ 1GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Unigen Corporation LEX010SGD2800QU-EJ 1GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Unigen Corporation LEX010SGD2800QU-EJ 1GB

Unigen Corporation LEX010SGD2800QU-EJ 1GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 53
    左右 38% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,752.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4% 更高的带宽
Unigen Corporation LEX010SGD2800QU-EJ 1GB 需要考虑的原因
Unigen Corporation LEX010SGD2800QU-EJ 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.8
    测试中的平均数值

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Unigen Corporation LEX010SGD2800QU-EJ 1GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR2
  • PassMark中的延时，ns
    33 left arrow 53
  • 读取速度，GB/s
    17.8 left arrow 4,200.9
  • 写入速度，GB/s
    12.5 left arrow 1,752.0
  • 内存带宽，mbps
    25600 left arrow 6400
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 547

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Unigen Corporation LEX010SGD2800QU-EJ 1GB RAM的比较

Corsair CMD16GX4M4B3000C15 4GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
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内存RAM
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