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Lexar Co Limited LD4AU016G-H3200GST 16GB
V-GEN D4H4GL26A8TS5 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs V-GEN D4H4GL26A8TS5 4GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 67
    左右 51% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
V-GEN D4H4GL26A8TS5 4GB 需要考虑的原因
V-GEN D4H4GL26A8TS5 4GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
V-GEN D4H4GL26A8TS5 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 67
  • 读取速度，GB/s
    17.8 left arrow 16.2
  • 写入速度，GB/s
    12.5 left arrow 8.3
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 1798

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

V-GEN D4H4GL26A8TS5 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM