Lexar Co Limited LD4AU016G-H3200GST 16GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 74

左右 55% 更低的延时
更快的读取速度，GB/s

17.8 13.6

测试中的平均数值
更快的写入速度，GB/s

12.5 7.7

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

报告一个错误

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 74
读取速度，GB/s

17.8 13.6
写入速度，GB/s

12.5 7.7
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 1616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston K6VDX7-MIE 8GB

Kingston K6VDX7-MIE 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB