Micron Technology 16JTF1G64AZ-1G6E1 8GB vs Corsair CMR64GX4M4C3333C16 16GB

总分

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

总分

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

差异规格评论

差异

Micron Technology 16JTF1G64AZ-1G6E1 8GB

需要考虑的原因
Micron Technology 16JTF1G64AZ-1G6E1 8GB

报告一个错误

Corsair CMR64GX4M4C3333C16 16GB

需要考虑的原因
Corsair CMR64GX4M4C3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

19.1 14.4

测试中的平均数值
更快的写入速度，GB/s

15.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Corsair CMR64GX4M4C3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

14.4 19.1
写入速度，GB/s

9.0 15.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2422 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

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Kingston 9905469-124.A00LF 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston 9905702-204.A00G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

AMD R5316G1609U2K 8GB

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G Skill Intl F4-4000C19-4GTZ 4GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB