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Micron Technology 16JTF51264HZ-1G6M1 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
28
左右 -22% 更低的延时
更快的读取速度,GB/s
16.7
12.9
测试中的平均数值
更快的写入速度,GB/s
13.2
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
23
读取速度,GB/s
12.9
16.7
写入速度,GB/s
9.0
13.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2112
3025
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM的比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston 9905598-026.A00G 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Golden Empire CL19-25-25 D4-4000 4GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Samsung M471B5673FH0-CF8 2GB
Kingston 99U5700-014.A00G 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Apacer Technology 78.CAGP7.AZC0B 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Kingston 99U5584-009.A00LF 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK32GX4M4K4333C19 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Asgard VMA41UH-MEC1U2AW1 16GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston X5H5PW-MIE 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
报告一个错误
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Bug description
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